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Top > Meet the Students > Alumni and Alumnae > Shota Watanabe
Department of Materials, Physics and Energy Engineering, Graduate School of Engineering
Ujihara Laboratory
World energy consumption has been increasing since 1950s, when the first transistor was invented. The performance of semiconductor device also have been improved by downsizing and integrating. However, it became difficult to improve due to the intrinsic physical properties of Si. As an alternative, Aluminium nitride (AlN) are attracting as the material for next generation. My current research is to obtain AlN single crystal by using thermodynamic calculation.